Application of freehyphen;carrier absorption toNhyphen;ZnSe materials characterization

摘要

Quantum theory has been applied to calculations of freehyphen;carrier absorption inNhyphen;ZnSe (including all major scattering mechanisms and screening). The electron concentrationn, dependence of the freehyphen;carrier absorption coefficient agr;, was calculated as a function of the ionized impurity concentration and the compensation ratio thgr;. An inherent limit to agr;, agr;inh, was determined at photon wavelengths, lgr;, of 3.3, 5, and 10 mgr;m. At 10 mgr;m, logthinsp;agr;inh(cmminus;1)bartil;logthinsp;n(cmminus;3)minus;15.9 for 1014lsim;n(cmminus;3)lsim;1017. A second experimental parameter, the derivative logarithmic absorption coefficientp, is shown to provide an unambiguous method for uniquely determiningnand thgr;, when used in conjunction with agr;Verbar;lgr;. The relation ofn(cmminus;3)bartil;6.7times;1015(3.5 minus;p) agr; (cmminus;1) is proposed for lgr;=10 mgr;m. Experimental data from the literature are analyzed in this scheme and values ofndetermined by Hallhyphen;effect measurements are shown to be in excellent agreement with theoretical predictions.