Elastoresistancehyphen;coefficient measurements ofphyphen;type silicon on sapphire

摘要

The elastoresistance coefficients are measured forphyphen;type (001) silicon on (1macr;012) sapphire substrate at room temperature. The impurity concentration in silicon is 2.4times;1017/cm3. The additional strain applied to the SOS cantilever ranges from 5.4times;10minus;5to 2.1times;10minus;4. The elastoresistance coefficientsmijare measured to bem11=18.3,m12=8.5, andm44=188plusmn;0.2. These values are 50ndash;80percnt; larger than those of bulkphyphen;type silicon. This can be ascribed to the fact that the energy level of the ground state with the light mass, which is split off under the compressive residual strain in the film of the order of 10minus;3, depends on the strain significantly more than bulkphyphen;type silicon.