Measurement of thermoelectric coefficients at the solid‐liquid interface of highly dopedp‐type silicon

摘要

A new version of the ac/dc method has been developed to measure the Peltier coefficient pgr;msat the solid‐liquid interface and the Thomson coefficient tgr;sof the solid phase at the melting pointTf. For silicon with a boron concentration of 1×1020cm−3the results are pgr;ms=+0.19 V ±25 and tgr;s=−0.38 mV K−1±23. From the first Kelvin relation, the Seebeck coefficient at the solid‐liquid interface agr;msis found to be +0.11 mV K−1. The absolute Seebeck coefficient agr;sof the solid phase atTfcan be inferred to be +0.10 mV K−1. The experimental technique also permits the measurement of the interface motion due to thermal convection in the liquid phase.