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首页> 外文期刊>Materials science in semiconductor processing >Cobalt-titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties
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Cobalt-titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties

机译:钴钛多层薄膜:钛间隔层厚度对阻抗特性的影响

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摘要

We investigated the impedance parameters of cobalt titanium (Co-Ti) multilayer thin films deposited on native oxidized Si (100) substrate under ultra-high vacuum (4 x 10(-8) mbar) by magnetron sputtering at room temperature. Electrical properties of Co/Ti/Co multilayer films were analyzed depending on the thickness of Ti spacer layer with the impedance spectroscopy as a function of frequency. Co/Ti multilayer films exhibited dielectric relaxation in both real and imaginary part of dielectric constants at the kilohertz frequency region and piezoelectric properties at the megahertz frequency region. We determined that the fabricated multilayer films have complex and super imposed type behavior when DC conductivity is used at lower frequency, resonance event and relaxation properties. (C) 2014 Elsevier Ltd. All rights reserved.
机译:我们研究了在室温下通过磁控溅射在超高真空(4 x 10(-8)mbar)下沉积在天然氧化Si(100)衬底上的钴钛(Co-Ti)多层薄膜的阻抗参数。根据Ti间隔层的厚度分析了Co / Ti / Co多层膜的电性能,其中阻抗谱是频率的函数。 Co / Ti多层膜在千赫兹频率区域的介电常数的实部和虚部均表现出介电弛豫,而在兆赫兹频率区域则表现出压电特性。我们确定,当在较低频率下使用直流电导率,谐振事件和弛豫特性时,所制造的多层膜具有复杂且叠加的行为。 (C)2014 Elsevier Ltd.保留所有权利。

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