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首页> 外文期刊>Materials Science and Technology: MST: A publication of the Institute of Metals >Ni{sub}3 Al based composite interlayers for wide gap transient liquid phase boning of NiAl-Hf single crystals to a nickel base superalloy
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Ni{sub}3 Al based composite interlayers for wide gap transient liquid phase boning of NiAl-Hf single crystals to a nickel base superalloy

机译:Ni {sub} 3 Al基复合中间层,用于NiAl-Hf单晶到镍基高温合金的宽间隙瞬态液相硼化

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摘要

The formation of undesirable second phases, for example σ and/or carbides, represents a major problem during transient liquid phase (TLP) bonding of NiAl alloys to nickel base superalloys. Unlike many other TLP bonding systems, the formation of these second phases does not appear to be associated directly with the presence of the interlayer. Instead, the formation of second phases in the bonds results from a combination of extensive interdiffusion between the two substrates and the low solubility, in NiAl, of common alloying additions to nickel base alloys (such as Cr, Mo, and W). The use of a composite interlayer consisting of NiAl (as a non-melting constituent) and copper (as a liquid former) allows very short bonding times and this has been found previously to suppress the formation of σ and carbides, during bonding. In contrast, the use of NiAl - Cu composite interlayers had little effect on the formation of second phases during post-bond heat treatment and this represents a considerable problem. Hence, the present paper investigates the use of an alternate, Ni{sub}3Al - Cu, interlayer, which is able to prevent the entry of Cr, Mo, and W into the NiAl alloy and hence suppress the formation of undesirable second phases (such as σ) during post-bond thermal exposure.
机译:不良的第二相(例如σ和/或碳化物)的形成代表了NiAl合金与镍基高温合金的瞬时液相(TLP)键合期间的主要问题。与许多其他TLP键合系统不同,这些第二相的形成似乎并不与中间层的存在直接相关。相反,键中第二相的形成是由于两种基材之间广泛的相互扩散以及镍基合金(如Cr,Mo和W)的常见合金添加物在NiAl中的低溶解度的结合。使用由NiAl(作为非熔融成分)和铜(作为液体形成剂)组成的复合中间层可以实现非常短的键合时间,并且以前发现这可以抑制键合期间形成σ和碳化物。相反,在键合后热处理期间,使用NiAl-Cu复合中间层对第二相的形成影响很小,这代表了一个相当大的问题。因此,本文研究了交替使用的Ni {sub} 3Al-Cu中间层,该中间层能够防止Cr,Mo和W进入NiAl合金,从而抑制不希望的第二相的形成(在键合后的热暴露过程中(例如σ)。

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