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首页> 外文期刊>Materials Characterization >Strain induced grain boundary migration effects on grain growth of an austenitic stainless steel during static and metadynamic recrystallization
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Strain induced grain boundary migration effects on grain growth of an austenitic stainless steel during static and metadynamic recrystallization

机译:静态和亚动态再结晶过程中应变诱发的晶界迁移对奥氏体不锈钢晶粒生长的影响

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Static and metadynamic recrystallization of an AISI 304L austenitic stainless steel was investigated at 1100 degrees C and 10(-2) s(-1) strain rate. The kinetics of recrystallization was determined through double hit compression tests. Two strain levels were selected for the first compression hit: epsilon(f) = 0.15 for static recrystallization (SRX) and 0.25 for metadynamic recrystallization (MDRX). Both the as-deformed and the recrystallized microstructures were investigated through optical microscopy and electron back-scattered diffraction (EBSD) technique. During deformation, strain induced grain boundary migration appeared to be significant, producing a square-like grain boundary structure aligned along the directions of the maximum shear stresses in compression. EBSD analysis revealed to be as a fundamental technique that the dislocation density was distributed heterogeneously in the deformed grains. Grain growth driven by surface energy reduction was also investigated, finding that it was too slow to explain the experimental data. Based on microstructural results, it was concluded that saturation of the nucleation sites occurred in the first stages of recrystallization, while grain growth driven by strain induced grain boundary migration (SIGBM) dominated the subsequent stages. (C) 2015 Elsevier Inc. All rights reserved.
机译:在1100摄氏度和10(-2)s(-1)应变速率下研究了AISI 304L奥氏体不锈钢的静态和超动力学重结晶。通过两次命中压缩试验确定重结晶的动力学。为第一次压缩命中选择了两个应变水平:静态重结晶(SRX)为epsilon(f)= 0.15,亚动力学重结晶(MDRX)为0.25。通过光学显微镜和电子背散射衍射(EBSD)技术研究了变形和再结晶的微观结构。在变形过程中,应变引起的晶界迁移似乎很明显,产生了一个正方形的晶界结构,该结构沿压缩时最大剪切应力的方向排列。 EBSD分析表明,位错密度在变形晶粒中异质分布是一项基本技术。还研究了由表面能降低引起的晶粒长大,发现解释实验数据太慢了。根据微观结构结果,可以得出结论,成核位点的饱和发生在再结晶的第一阶段,而应变诱导的晶界迁移(SIGBM)驱动的晶粒生长则主导了随后的阶段。 (C)2015 Elsevier Inc.保留所有权利。

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