Pulsedhyphen;electronhyphen;beam annealing of ionhyphen;implantation damage

摘要

Shorthyphen;duration highhyphen;intensity pulsed electron beams have been used to anneal ionhyphen;implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using4He+backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquidhyphen;phase epitaxial regrowth initiating from the substrate. The highhyphen;temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.