Ion‐beam‐induced atomic mixing and amorphization in Ti/Ni bilayered thin films

摘要

Ion‐beam‐induced atomic mixing of Ti/Ni bilayers was studied by transmission electron microscopy. The depth of the Ti/Ni interfaces was controlled to be approximately equal to the mean damage depth of 150‐keV Ar ions. At a critical dose of 1×1015ions/cm2, diffuse halo ringsappearin the electron diffraction pattern, and increase in their intensity with Ar dose. This indicates that an amorphous phase is formed by ion mixing of the bilayers. After a high dose of 1×1017ions/cm2, a high density of Ar bubblesisobserved near the interface boundary. These resultsareunderstoodin terms of the simultaneous operation of ion‐beam‐induced mixing and radiation‐induced lattice instability.