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首页> 外文期刊>Materials transactions >Strengthening of Titanium Silicon Carbide by Grain Orientation Control and Silicon Carbide Whisker Dispersion
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Strengthening of Titanium Silicon Carbide by Grain Orientation Control and Silicon Carbide Whisker Dispersion

机译:晶粒取向控制和碳化硅晶须分散增强碳化硅钛

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摘要

Strengthening of titanium silicon carbide (Ti_3SiC_2) was investigated by the grain orientation control and silicon carbide (SiC) whisker dispersion, Ti_3SiC_2 with preferentially oriented grains was prepared by hot-pressing of milled Ti_3SiC_2 powder. Composites were also fabricated by hot-pressing of a blend of the milled Ti_3SiC_2 powder and SiC whiskers. During hot-pressing, the preferential orientation of Ti_3SiC_2 grains was achieved while the precipitation of titanium carbide (TiC) occurred. As a result, 4-point bending strength of preferentially-oriented Ti_3SiC_2 was approximately 1.5 times the randomly-oriented pure Ti_3SiC_2 in a temperature range from room temperature to 1073 K. The bending strength of Ti_3SiC_2 with 15 vol percent whiskers reached approximately 1 GPa, approximately 3 times the randomly-oriented pure Ti_3SiC_2, in the range to 1073 K. The results in this study indicate that the strengthening effect on Ti_3SiC_2was contributed from the orientation control, TiC precipitation and SiC whisker dispersion.
机译:通过晶粒取向控制和碳化硅晶须分散体研究了碳化钛硅(Ti_3SiC_2)的强化,通过对碾磨过的Ti_3SiC_2粉末进行热压,制备了具有优先取向晶粒的Ti_3SiC_2。还通过热压研磨的Ti_3SiC_2粉末和SiC晶须的混合物来制造复合材料。在热压过程中,在发生碳化钛(TiC)析出的同时,实现了Ti_3SiC_2晶粒的择优取向。结果,在室温至1073 K的温度范围内,优先取向的Ti_3SiC_2的四点弯曲强度约为随机取向的纯Ti_3SiC_2的1.5倍。晶须含量为15vol%的Ti_3SiC_2的弯曲强度约为1 GPa,大约是随机取向的纯Ti_3SiC_2的3倍,在1073 K范围内。该研究结果表明,对Ti_3SiC_2的强化作用是由取向控制,TiC沉淀和SiC晶须分散引起的。

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