...
机译:
Transient enhanced diffusion; Silicon; Si; Generation; Mechanisms;
机译:ChemInform Abstract: Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient.
机译:Comparison of low energy BF_(2)~(+), BCl_(2)~(+), and BBr_(2)~(+) implants for the fabrication of ultrashallow P~(+)-N junctions
机译:Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation
机译:a study of cobalt silicide formed by mEVVa implantation.