Impurity (Si) concentration effects on radiationhyphen;induced deep traps innhyphen;InP

摘要

Impurity concentration effects on radiation defects and minority carrier (hole) diffusion length in 1hyphen;MeV electron irradiatednhyphen;InP have been studied by deep level transient spectroscopy and the electron beam induced current method. Trap concentrations are found to markedly decrease with an increase in the Sihyphen;impurity concentration. It is also indicated that Sihyphen;impurity doping more than 1017cmminus;3of concentration shows a strong suppression effect on degradation in minority carrier diffusion length, caused by electron irradiation innhyphen;InP.