Twohyphen;dimensional current density distribution within threehyphen;terminal semiconductor devices

摘要

To understand fully the operating mechanism of threehyphen;terminal semiconductor devices, it is important to know the minorityhyphen;carrier, electric field, potential, and currenthyphen;density distributions within the device as a function of the spatial variables. This paper presents the formulation and closedhyphen;form solution of the twohyphen;dimensional dependency of the minorityhyphen;carrier distribution within a threehyphen;terminal semiconductor device and in particular as it applies to the thyristor. Boundary conditions to obtain the solution were chosen so as to conform to realistic devices being manufactured and to the physical properties of their surfaces. The general solution was derived starting from the basic diffusion equation, and family of curves of the solution for the static case of typical thyristors were obtained with the aid of a digital computer. This was done for the forward blocking and forward conducting states with and without gate current. Experimental results were carried out and good correlation with analytical calculations were obtained.