Metalhyphen;insulatorhyphen;semiconductor diodes fabricated on InP, InGaAsP, and InGaAs

摘要

The compositional dependence of In1minus;xGaxAsyP1minus;y(y= 2.2x) MIS (metalhyphen;insulatorhyphen;semiconductor) diodeChyphen;Vcharacteristics was investigated for entire As fraction range (0les;yles;1). As the gate insulator, the pyrolytic Al2O3film was employed. Allnhyphen;type MIS diodes fabricated on InP, In0.76Ga0.24As0.55P0.45and In0.53Ga0.47As showed almost entire capacitance variation between the accumulation and highhyphen;frequency inversion capacitances. The compositional dependence of theChyphen;Vcurve was clearly seen in its hysteresis and the surface state density distribution. TheChyphen;Vcurve hysteresis becomes less pronounced as the crystal composition is closer to InGaAs. The botton of the Vhyphen;shaped surface state density distribution shifts toward the conduction band edge as As fraction (y) increases. Therefore, the surface state density near the conduction band edge was reduced to 1012/cm2eV, compared to the value 1013/cm2eV at InP surface.