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首页> 外文期刊>Magnetic Resonance in Chemistry: MRC >H-1 chemical shifts in NMR. Part 27: proton chemical shifts in sulfoxides and sulfones and the magnetic anisotropy, electric field and steric effects of the SO bond
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H-1 chemical shifts in NMR. Part 27: proton chemical shifts in sulfoxides and sulfones and the magnetic anisotropy, electric field and steric effects of the SO bond

机译:NMR中的H-1化学位移。第27部分:亚砜和砜中的质子化学位移以及SO键的磁各向异性,电场和空间效应

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The H-1 chemical shifts of a series of sulfoxide and sulfone compounds in CDCl3 solvent were obtained from experiment and the literature. These included dialkyl sulfoxides and sulfones (R2SO/R2SO2, R = Me, Et, Pr, n-Bu), the cyclic compounds tetramethylene sulfoxide/sulfone, pentamethylene sulfoxide/sulfone and the aromatic compounds p-tolylmethylsulfoxide, dibenzothiopheneoxide/dioxide, E-9-phenanthrylmethylsulfoxide and (E) (Z)-1-methylsulfinyl-2-methyl naphthalene. The spectra of the pentamethylene SO and SO2 Compounds were obtained at -70 degrees C to obtain the spectra from the separate conformers (SO) and from the noninverting ring (SO2). This allowed the determination of the substituent chemical shifts (SCS) of the SO and SO2 functional groups, which were analyzed in terms of the SO bond electric field, magnetic anisotropy and steric effect for long-range protons together with a model (CHARGE8d) for the calculation of the two and three bond effects. After parameterization, the overall root mean square (RMS) error (observed-calculated) for a dataset of 354 H-1 chemical shifts was 0.11 ppm. The anisotropy of the SO bond was found to be very small, supporting the dominant single bond S+ -O- character of this bond. Copyright (C) 2008 John Wiley & Sons, Ltd.
机译:从实验和文献中获得了一系列亚砜和砜化合物在CDCl3溶剂中的H-1化学位移。这些包括二烷基亚砜和砜(R2SO / R2SO2,R = Me,Et,Pr,n-Bu),环状化合物四亚甲基亚砜/砜,五亚甲基亚砜/砜和芳族化合物对甲苯基甲基亚砜,二苯并噻吩二氧化物/二氧化物,E- 9-菲基甲基亚砜和(E)(Z)-1-甲基亚磺酰基-2-甲基萘。在-70摄氏度下获得五亚甲基SO和SO2化合物的光谱,以从独立的构象异构体(SO)和同相环(SO2)获得光谱。这样就可以确定SO和SO2官能团的取代基化学位移(SCS),并根据长质子的SO键电场,磁各向异性和空间效应以及模型(CHARGE8d)进行了分析。两个和三个键效应的计算。参数化后,354 H-1化学位移数据集的总体均方根(RMS)误差(观察到的计算结果)为0.11 ppm。发现SO键的各向异性非常小,支持该键的主要单键S + -O-特性。版权所有(C)2008 John Wiley&Sons,Ltd.

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