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首页> 外文期刊>Macromolecular Research >Influence of a Stacked-CuPc Layer on the Performance of Organic Light-Emitting Diodes
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Influence of a Stacked-CuPc Layer on the Performance of Organic Light-Emitting Diodes

机译:CuPc叠层对有机发光二极管性能的影响

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Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered,organic,light-emitting diode (OLEDs).The well-stacked CuPc layer increased the stability and efficiency of the devices.Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer;the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film.Thermal annealing at about 100 deg C increased the current flow through the CuPc layer by over 25%.Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well.However,magnetic field treatment during deposition was less effective than thermal treatment.Eventually,a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present,multi-layered,ITO/CuPc/NPD/Alq_3/LiF/Al devices.Thermal annealing at about 100 deg C for 3 h produced the most efficient,multi-layered EL devices in the present study.
机译:将真空沉积的酞菁铜(CuPc)放置在多层有机发光二极管(OLED)中的铟锡氧化物(ITO)电极和空穴传输层(HTL)之间的薄中间层上。进行CuPc沉积后的热退火和CuPc沉积过程中的磁场处理,以获得堆叠的CuPc层;前者增加了CuPc分子的堆叠密度和CuPc膜的排列。在约100摄氏度的温度下进行的热退火使通过CuPc层的电流增加了25%以上,表面粗糙度从4.12 nm降低至3.65 nm,并且膜表面的尖峰也降低了,但是,沉积过程中的磁场处理效果不如最终,当将热退火的CuPc层放置在当前的多层ITO / CuPc / NPD / Alq_3 / LiF / Al器件中时,在给定电压下可获得更高的发光度。在本研究中,在约100摄氏度的温度下进行3小时的热退火可以生产出最有效的多层EL器件。

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