Surface accumulation of manganese in Si+hyphen;implanted and annealed semihyphen;insulating indium phosphide

摘要

Using lowhyphen;temperature photoluminescence and secondary ion mass spectrometry measurements, we show here that Mn, a residual impurity, accumulates in a region close to the sample surface in Si+hyphen; but not in Ar+hyphen;implanted and close contact annealed bulk semihyphen;insulating (SI) InP(Fe). These results which constitute a first observation on the influence of the electrical nature of the species implanted in InP are tentatively explained using a simple model based on the amphoteric nature of Mn (substitutional and interstitial) and the electric field due to the charge distribution of the implanted impurities.