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Production and characterization of Tm~(3+)/Yb~(3+) codoped pedestal-type PbO-GeO_2 waveguides

机译:Tm〜(3 +)/ Yb〜(3+)共掺杂基架型PbO-GeO_2波导的制备与表征

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摘要

This work explores the production and characterization of pedestal-type active waveguides based on PbO-GeO_2 (PGO) thin films codoped with Tm~(3+)/Yb~(3+) rare earth ions. Silicon wafers containing around 1.7 μm of SiO_2 thickness were used as substrate, and the pedestal structure was obtained by conventional photolithography and plasma etching in a reactive ion etching reactor. Plasma etching procedures were made in steps to reduce roughness at the laterals and sidewalls of waveguides. Around 0.5 μm of Tm~(3+)/Yb~(3+) codoped PGO thin film was obtained by radio frequency magnetron sputtering deposition after etching procedures. Results of scanning electron microscopy confirmed the waveguide pedestal profile. Optical propagation losses around 4, 5, and 20 dB/cm were observed at 1050, 633, and 543 nm, respectively, for waveguide width in the 30-100 μm range. Near field profiles at these wavelengths and also at 980 nm are also reported and confirmed the multimode coupling behavior. The present results corroborate the possibility of using Tm~(3+)/Yb~(3+) codoped PGO thin films as active waveguides for photonic applications.
机译:这项工作探索了基于共掺有Tm〜(3 +)/ Yb〜(3+)稀土离子的PbO-GeO_2(PGO)薄膜的基座型有源波导的生产和表征。包含约1.7μmSiO_2厚度的硅片用作衬底,并通过常规光刻和在反应离子刻蚀反应器中进行等离子刻蚀获得基座结构。逐步进行等离子刻蚀程序,以减少波导侧面和侧壁的粗糙度。在蚀刻步骤之后,通过射频磁控溅射沉积获得了约0.5μm的Tm〜(3 +)/ Yb〜(3+)共掺杂PGO薄膜。扫描电子显微镜的结果证实了波导的基座轮廓。对于30-100μm范围的波导宽度,分别在1050、633和543 nm处观察到大约4、5和20 dB / cm的光传播损耗。还报道了在这些波长以及在980 nm处的近场分布,并证实了多模耦合行为。目前的结果证实了使用Tm〜(3 +)/ Yb〜(3+)共掺杂的PGO薄膜作为光子应用有源波导的可能性。

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