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Phase equilibria, solubility and modeling study of CO2/CH4 + tetra-n-butylammonium bromide aqueous semi-clathrate systems

机译:CO2 / CH4 +四正丁基溴化铵水溶液半包合物的相平衡,溶解度和模型研究

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Interest has grown in tetra-n-butylammonium bromide (TBAB) semi-clathrates due to their formation at lower pressures and higher temperatures than conventional gas hydrates. This study focuses on TBAB semi-clathrates formed with carbon dioxide and methane and is to our knowledge the first study to report and model semi-clathrate former solubility under hydrate-liquid-vapor equilibrium conditions. A thermodynamic model was developed using the Trebble-Bishnoi equation of state to calculate vapor and liquid phase fugacity. Liquid activity was determined using the electrolyte non-random two liquid model (eNRTL). The solid semi-clathrate phase was modeled using a modified van der Waals-Platteeuw model (vdW-P), with parameters re-optimized based on the data obtained in this study. Equilibrium conditions were successfully modeled over the temperature range of 281-294 K, pressure range of 377-11,000 kPa and TBAB composition range of 5-40 wt%. The model functioned well for carbon dioxide with an average absolute relative error (AARE) of 4.7% for pressure prediction and an AARE of 17.5% for solubility. Methane was more difficult to model and yielded AAREs of 21.6% for pressure and 32.5% for solubility. Further understanding of semi-clathrate crystal structure and interactions between methane and TBAB would aid in improving the model. (C) 2014 Elsevier B.V. All rights reserved.
机译:由于四正丁基溴化铵(TBAB)半包合物在比常规气体水合物低的压力和较高的温度下形成,因此引起了人们的兴趣。这项研究的重点是与二氧化碳和甲烷形成的TBAB半clathates,据我们所知,这是第一个报告和建模水合物-液体-蒸汽平衡条件下半clath的前溶解度的研究。使用Trebble-Bishnoi状态方程开发了一个热力学模型,以计算气相和液相的逸度。使用电解质非随机两种液体模型(eNRTL)确定液体活性。使用改良的范德华兹-普拉特euw模型(vdW-P)对固态半包合物相进行建模,并根据本研究中获得的数据对参数进行了优化。在281-294 K的温度范围,377-11,000 kPa的压力范围和5-40 wt%的TBAB组成范围内成功模拟了平衡条件。该模型对于二氧化碳具有良好的功能,压力预测的平均绝对相对误差(AARE)为4.7%,溶解度的平均绝对相对误差(AARE)为17.5%。甲烷更难建模,压力下的AARE值为21.6%,溶解度下的AARE为32.5%。进一步了解半包合物晶体结构以及甲烷与TBAB之间的相互作用将有助于改进模型。 (C)2014 Elsevier B.V.保留所有权利。

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