Chemical Reactions During Wet-Etching Process of LSMO/PZT/LSMO-Structured Device Fabrication

摘要

Wet-etching behavior of Lanthanum Strontium Manganate (LSMO) electrode and fer?roelectric Pb_(0.52)Zr_(0.48)TiO_3 (PZT) for large area thin film using LSMO/PZT/LSMO micro-sensing device was investigated using various etching solutions. The results show that PZT and LSMO thin films can be protected by the Pt hard etching mask. The etch?ing mechanism of PZT film was attributed to the double replacement reaction etching model. The difference of etching rates of PZT and LSMO may cause damage of upper electrodes resulting in device failure. A careful design of the mask pattern of PZT and a well control of etching time are suggested to prevent the problem.