Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFS-FET) for 1T-type FRAM Based on Polyvinylidene Fluoride (PVDF) Thin Film

摘要

The metal-ferroelectric-semiconductor field effect transistor (MFSFET) was fabricated using polyvinylidene fluoride (PVDF) thin film as a ferroelectric layer PVDF thin films of 4 and 6 wt percent were spin-coated on Si(100) wafers. Ferroelectric hystereytic curves inducing a counterclockwise loop, which means that the deposited PVDF pirns were crystallized with ferroelectric beta phase, was exhibited in the drain current-gale voltage (I_D-V_G ) characteristics ofMFSFET The memory window widths of the MFS FET were more than 1.6 V. The MFSFET that operates with the PVDF thin film used as a gate dielectric material is shown in the drain current-drain voltage (I_D-V_D) characteristics. The MFSFET using PVDF as ferroelectric layer has promising potential for use in low-voltage operable one transistor (1T) type ferroelectric random access memories (FeRAM) using organic material.