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机译:高电阻CoFeB/MgO/CoFeB磁隧道结中隧穿光谱退火温度的依赖性
Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan;
Canon ANELVA Corp, Elect Device Equipment Div, Tokyo 1838508, Japan;
Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan;
magnetic films and multilayers; electronic band structure; electronic transport; tunneling; ROOM-TEMPERATURE; MAGNETORESISTANCE; SPECTROSCOPY; INTERFACE; FILM;
机译:Tunneling spectroscopy of magnetic tunnel junctions: Comparison between CoFeB/MgO/CoFeB and CoFeB/Al-O/CoFeB
机译:Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions With MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer
机译:230 ROOM TEMPERATURE MAGNETORESISTANCE IN CoFeB/MgO/CoFeB MAGNETIC TUNNEL JUNCTIONS
机译:在CoFeB / MgO / CoFeB磁隧道交界处的CoFeB层和MgO阻挡层之间的界面处的退火诱导的固相外延
机译:利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
机译:在垂直MgO / CoFeB / W / CoFeB / MgO记录框中增强超薄W空间层的热稳定性
机译:溅射巨型隧道磁电阻的依赖性 CoFeB / mgO / CoFeB磁隧道结对mgO势垒厚度和mgO的影响 退火温度