首页> 外文期刊>Bulletin of the Russian Academy of Sciences. Physics >Influence of oxygen dose and heat treatment conditions on the formation of ion synthesized borosilicate layers
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Influence of oxygen dose and heat treatment conditions on the formation of ion synthesized borosilicate layers

机译:氧剂量和热处理条件对离子合成硼硅酸盐层形成的影响

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摘要

The results from investigating buried silicate layers formed by implantation in silicon with both oxygen and boron ions are presented. The properties of the synthesized layers were studied by means of infrared spectrometry, Auger spectrometry, and SIMS. It is shown a buried layer of silicate glass is formed in the system if the dose of molecular oxygen is 44017 cm ~2. Our results confirm the possibility of creating nanocluster systems in a buried layer in a silicon matrix.
机译:给出了研究通过在硅中注入氧和硼离子而形成的掩埋硅酸盐层的结果。通过红外光谱,俄歇光谱和SIMS研究了合成层的性质。如果分子氧的剂量为44017 cm〜2,则表明在系统中形成了硅酸盐玻璃的埋层。我们的结果证实了在硅基体的掩埋层中创建纳米簇系统的可能性。

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