Study of radiation damage induced by 82MeV protons on multi-pixel Geiger-mode avalanche photodiodes

摘要

Results from a study on the radiation hardness of multi-pixel Geiger-mode avalanche photodiodes (G-APDs) are presented. Recently developed G-APDs from five manufacturers (Hamamatsu (Japan),CPTA/Photonique (Russia/Switzerland), Zecotek (Singapore), Pulsar (Russia) and FBK-IRST (Italy)) were exposed to 82MeV protons at fluences up to 10~(10) protons/cm~2 at the Paul Scherrer Institute. The G-APD’s main parameters were measured before and after irradiation. The effects of the proton radiation on breakdown voltage, quenching resistance value, gain, photon detection efficiency, dark current and dark count rate for these devices are shown and discussed.