Performances of epitaxial GaAs p/i/n structures for X-ray imaging

摘要

We have realized 150 mum x 150 mum pixels using ion implantation followed by photolithography, metallic contact evaporation and chemical etching on about 200 mum thick GaAs epitaxial layers. These layers were grown on n(+) and p(+) substrates by an already described Chemical Reaction technique, which is economical, non-polluting and can attain growth rates of several microns per minute. The mesa p(+)/i/n(+) pixel were characterized using current-voltage and capacitance-voltage measurements. The charge collection efficiency was evaluated by photoconductivity measurements under typical conditions of standard radiological examinations. (C) 2002 Elsevier Science B.V. All rights reserved. References: 7