Effects of Zn doping concentration on resistive switching characteristics in Ag/La1-x Zn (x) MnO-Si devices

摘要

Ag /La (1 -x) Zn (x) MnO-Si devices with different Zn doping contents were fabricated through sol-gel method. The effects of Zn doping concentration on the microstructure of La (1 -x) Zn (x) MnO (3) films, as well as on the resistance switching behaviour and endurance characteristics of Ag /La (1 -x) Zn (x) MnO-Si were investigated. After annealing at 600 (ay) C for 1 h, the La (1 -x) Zn (x) MnO (3) (x = 0.1, 0.2, 0.3, 0.4, 0.5) are amorphous and have bipolar resistance characteristics, with R (H R S) / R (L R S) ratios > 10 (3) . However, the endurance characteristics show considerable differences; x= 0 . 3 shows the best endurance characteristics in more than 1000 switching cycles. The conduction mechanism of the Ag /La (1 -x) Zn (x) MnO-Si is the Schottky emission mode at high resistance state. However, the conduction mechanism at low resistance state varies with Zn doping concentration. The dominant mechanism at x= 0.1 is filamentary conduction mechanism, whereas that at x >= 0.2 is space-charge-limited current conduction.