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Catalytic synthesis of ZnO nanorods on patterned silicon wafer-An optimum material for gas sensor

机译:图案化硅片上ZnO纳米棒的催化合成-气体传感器的最佳材料

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ZnO nanorods have been synthesized over etch-patterned Si (110) wafer using annealed silver thin film as growth catalyst. The growth of ZnO nanorods were performed by a two-step process. Initially, the deposition of Zn thin film was done on the annealed silver catalyst film over etch-patterned Si (110) substrate by thermal evaporation, and then annealed at 800 deg C in air. The etching of the patterned Si (110) wafers was carried out by 50 percent aqueous KOH solution. The samples were investigated by optical microscopy, scanning electron microscopy, X-ray diffraction, Raman spectroscopy and room temperature photoluminescence spec-troscopy. 'V shaped grooves with no undercut were formed after etching due to the anisotropic nature of the KOH etchant. The etch-patterned wafer was used to provide larger surface area for ZnO growth by forming 'V'-grooves. This ZnO film may be predicted as a very good material for gas sensor.
机译:ZnO纳米棒已使用退火的银薄膜作为生长催化剂在蚀刻图案化的Si(110)晶圆上合成。 ZnO纳米棒的生长通过两步过程进行。最初,通过热蒸发在退火图案化的Si(110)衬底上的退火银催化剂膜上完成Zn薄膜的沉积,然后在800摄氏度的空气中退火。用50%的KOH水溶液蚀刻图案化的Si(110)晶圆。通过光学显微镜,扫描电子显微镜,X射线衍射,拉曼光谱和室温光致发光光谱研究样品。由于KOH蚀刻剂的各向异性,在蚀刻后形成没有底切的V形凹槽。蚀刻图案的晶片用于通过形成“ V”形槽为ZnO生长提供更大的表面积。可以预言此ZnO膜是用于气体传感器的非常好的材料。

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