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Stress intensity factor analysis of an interfacial corner between piezoelectric bimaterials using the H-integral method

机译:使用H积分法分析压电双材料之间界面角的应力强度因子

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Asymptotic solutions around the interfacial corner between piezoelectric bimaterials can be obtained by the combination of the Stroh formalism and the Williams eigenfunction expansion method. Based on an extension of the Stroh formalism and the H-integral derived from Betti's reciprocal principle for piezoelectric problems, we analyzed the stress intensity factors (SIFs) and asymptotic solutions of piezoelectric bimaterials. The eigenvalues and eigenvectors of an interfacial corner between dissimilar piezoelectric anisotropic materials are determined using the key matrix. The H-integral for piezoelectric problems is introduced to obtain the scalar coefficients, which are related to the SIFs. We propose a new definition of the SIFs of an interfacial corner for piezoelectric materials, and we demonstrated the accuracy of the SIFs by comparing the asymptotic solutions with the results obtained by the finite element method (FEM) with very fine meshes.
机译:可以通过Stroh形式主义和Williams本征函数展开法的组合来获得压电双材料之间界面角附近的渐近解。基于Stroh形式主义的扩展和从贝蒂的对等原理求得的H积分,研究了压电双材料的应力强度因子(SIF)和渐近解。使用键矩阵确定不同压电各向异性材料之间的界面角的特征值和特征向量。引入压电问题的H积分以获得与SIF相关的标量系数。我们提出了压电材料界面角的SIF的新定义,并且通过将渐近解与具有非常精细网格的有限元方法(FEM)的结果进行比较,证明了SIF的准确性。

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