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Effects of hydroxide ion addition on anodic dissolution of pure aluminium in chloride ion-containing solution

机译:添加氢氧根离子对纯铝在含氯离子溶液中阳极溶解的影响

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摘要

Effects of hydroxide (OH{sup}-) ion addition on the anodic dissolution of pure aluminum (Al) were investigated in chloride (Cl{sup}-) ion-containing solution using potentiodynamic polarisation experiment, optical microscopy, ac impedancespectroscopy and electrochemical quartz crystal microbalance technique combined with open circuit potential transient technique. The addition of OH{sup}- ions to NaCl solution raised the anodic dissolution rate of pure Al in value and at the same timeextended the constant anodic current density region in width on the polarisation curves. This implies that the pitting corrosion is preceded by uniform thinning of the Al oxide film due to the chemical dissolution by the attack of OH{sup}- ion additives,which is validated by optical microscopy. The mass change rate enhanced by the addition of 0.5 M Cl{sup}- ions during immersion in OH{sup}- ion-free 0.01 M NaCl solution indicates that Cl{sup}- ions incorporate into the growing Al oxide film even atsteady state open-circuit potential. From the lower fresh inner oxide film resistance R{sub}(inn,ox) values in OH{sup}- ion-containing chloride solution than those in OH{sup}- ion-free chloride solution below the pitting potential, it is suggested thatthe chemical dissolution of the fresh inner oxide film accelerated by the attack of OH{sup}- ions inhibits the formation of the Cl{sup}- ion-incorporated outer film, what is responsible for the suppression of the pitting corrosion of pure Al.
机译:使用电位动力学极化实验,光学显微镜,交流阻抗谱和电化学石英研究了添加氢氧化物(OH {sup}-)离子对纯铝(Al)阳极溶解的影响,该溶液含氯(Cl {sup}-)。晶体微天平技术与开路电位瞬变技术相结合。向NaCl溶液中添加OH {sup}-离子提高了纯Al的阳极溶解速率,同时扩展了极化曲线上恒定的阳极电流密度区域。这意味着在点蚀之前,由于OH {sup}-离子添加剂的侵蚀而化学溶解,从而使Al氧化膜均匀变薄,这在光学显微镜下得到了验证。通过在无OH {sup}-离子的0.01 M NaCl溶液中浸泡期间添加0.5 M Cl {sup}-离子而提高的质量变化率表明,Cl {sup}-离子甚至在稳态时也掺入生长的Al氧化膜中开路电位。从含点蚀电位以下的含OH {sup}-离子的氯化物溶液中的新鲜内部氧化物膜电阻R {sub}(inn,ox)值低于含OH {sup}-离子的氯化物溶液中的R {sub}(inn,ox)值,建议OH {sup}-离子的侵蚀加速了内部氧化膜的化学溶解,从而抑制了掺有Cl {sup}-离子的外膜的形成,这是抑制纯Al点蚀的原因。

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