Electrical charging/discharging properties of organic memory device using cdse nanoparticles/PMMA blend as the tunneling layer

摘要

The electrical charging/discharging phenomena in organic memory based on the PMMACdSe nano-particles (NPs) blend tunneling insulator were demonstrated. The CdSe NPs multilayer could be easily fabricated by simple spin-coating process of blended solution of CdSe NPs in PMMA. Due to the hole trapping, the capacitance-voltage (C-V) characteristics exhibit a large counterclockwise hysteresis that is proportional to the gate bias sweep range. This simple fabrication method have a large memory window of 14.9 V after writing and erasing modes and a long charge retention ability over 10,000 s.