Electrodeposition of InAs

摘要

We report on the direct electrodeposition of InAsfilms at room temperature. The electrochemical analog of atomiclayer epitaxy was used to form the deposits. Up to 160 nm thickfilms of InAs were formed by the alternating electrodeposition ofatomic layers of In and As, under what appear to be surfacelimited conditions (underpotential deposits). The films obtainedwere characterized using atomic-force microscopy, X-raydiffraction, ellipsometry, and infrared absorption.