Improvement in the Performance of Tin Oxide Thin-Film Transistors by Alumina Doping

摘要

Thin-film transistors (TFTs) were fabricated with an aluminum oxide-doped tin oxide (SAO) channel, deposited by cosputtering SnO2 and Al2O3 targets. The effect of the Al2O3 content on the device performance of the SnOx-based TFTs was investigated. The TFTs with a nondoped SnOx channel did not show a promising performance. However, the field-effect mobility and threshold voltage of the SAO TFTs with an Al concentration of about 0.9 atom % were improved to similar to 3.8 cm(2)/V s and similar to 0.6 V, respectively. This improved device performance was attributed to the greatly reduced carrier concentration induced by the carrier trapping at the Al impurity sites.