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The effect of manganese doping on chromium deposition at Pt/YSZ cathode interfaces

机译:锰掺杂对Pt / YSZ阴极界面处铬沉积的影响

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The effect of yttria-stabilized zirconia (YSZ) doping on Cr deposition at a Pt-electrode/YSZ-electrolyte interface was investigated. Comparison between undoped and Mn-doped YSZ electrolyte surfaces after cathodic polarization for 25 h in moist air at 800 degrees C in the presence of chromia indicated that the presence of Mn in the electrolyte significantly enhances Cr deposition at the electrode/electrolyte interface. Impedance spectroscopy results showed that with a Mn-doped YSZ electrolyte the electrode polarization resistance decreased significantly with polarization time, which was attributed to the increase in the three-phase boundary length by the p-type semiconducting chromia deposits.
机译:研究了氧化钇稳定的氧化锆(YSZ)掺杂对Pt电极/ YSZ-电解质界面上Cr沉积的影响。在氧化铬存在下在800摄氏度的潮湿空气中阴极极化25小时后,未掺杂和Mn掺杂的YSZ电解质表面之间的比较表明,电解质中Mn的存在显着增强了Cr在电极/电解质界面的沉积。阻抗谱结果表明,掺杂Mn的YSZ电解质的电极极化电阻随极化时间而显着降低,这归因于p型半导体氧化铬沉积物增加了三相边界长度。

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