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Enhanced resolution of copper and bismuth by addition of gallium in anodic stripping voltammetry with the bismuth film electrode

机译:通过使用铋膜电极在阳极溶出伏安法中添加镓,提高了铜和铋的分离度

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摘要

This paper presents the enhanced analysis of copper on a bismuth electrode upon addition of gallium(III). The presence of gallium alleviates the problems of overlapping stripping signals usually observed between copper and bismuth when using the Bismuth Film Electrode. In addition, it has been found that the presence of gallium improves the reproducibility of the bismuth stripping signal. Simultaneous deposition of copper and bismuth at - 1500 mV for 2 minutes in a supporting electrolyte composed of 0.1 M pH 4.75 acetate buffer with 250 mu g L-1 gallium yields well resolved copper and bismuth signals when analyzed with square-wave anodic stripping voltammetry. Simultaneous analysis of copper and lead yielded linear calibration plots in the range 10 to 100 mu g L-1 with regression coefficients of 0.997 and 0.994 respectively. The theoretical detection limit for copper was calculated to be 4.98 mu g L-1 utilizing a 2 minutes deposition time. ne relative standard deviation for a copper concentration of 50 mu g L-1 was 1.6% (n = 10).
机译:本文介绍了添加镓(III)后铋电极上铜的增强分析。镓的存在减轻了在使用铋膜电极时通常在铜和铋之间观察到的剥离信号重叠的问题。另外,已经发现镓的存在改善了铋剥离信号的可再现性。用方波阳极溶出伏安法分析时,在由0.1 M pH 4.75乙酸盐缓冲液和250μg L-1镓组成的支持电解质中,铜和铋在-1500 mV下同时沉积2分钟,可产生良好分离的铜和铋信号。同时分析铜和铅可得到10至100μgL-1范围内的线性校准图,回归系数分别为0.997和0.994。利用2分钟的沉积时间,铜的理论检出限经计算为4.98微克L-1。铜浓度为50μg L-1时的相对标准偏差为1.6%(n = 10)。

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