The Adequate Selection Algorithm by Estimating Local Oxide Influence

摘要

The characteristics of the element during the formation of integrated elements of integrated structure intended to not impair. In this case the manufacture of integrated circuits focuses on the area where the integrated element is being formed. It is essential that the area dimensions at the beginning of the technological processes must be kept the same during the whole technological process. The main aim is to maintain unchanged characteristics of the three-dimensional structure using local oxidation technology for isolation of integrated elements and to verify if the three-dimensional integrated element fits into the integrated circuits. In essence the designers of technological processes, manufacturers and researchers do not mention this stage of technological process and the methods (or algorithms) used to their rationalization [1]. Minimizing the cost of production processes is useful to create the adequate selection algorithm of the three-dimensional field-effect transistor in the three-dimensional integrated circuits by estimating local oxide influence, the realization of which is based on created mathematical models and their adaptation for the simulation.