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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Structural Evolution of Multilayer SnS/Cu/ZnS Stack to Phase-Pure Cu2ZnSnS4 Thin Films by Thermal Processing
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Structural Evolution of Multilayer SnS/Cu/ZnS Stack to Phase-Pure Cu2ZnSnS4 Thin Films by Thermal Processing

机译:热处理工艺将多层SnS / Cu / ZnS叠层结构转变为纯Cu2ZnSnS4薄膜的结构演变

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In this work, thin films of phase-pure Cu2ZnSnS4 (CZTS) were developed from a stack of binary metal sulfides by post-deposition thermal processing. The precursor stack SnS/Cu/ZnS was grown by sequential electrodeposition of SnS and Cu layers followed by thermal evaporation of ZnS layer. The transformation from binary/ternary composition to phase-pureCZTSwas studied using different experimental tools such asX-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The TEM images revealed the formation of tetragonal crystals with interplanar spacing 0.312 nm. Raman spectra of the films confirmed that annealing at 550 degrees C for 30 min under N-2/S ambient resulted in the formation of phase-pure CZTS film. The bandgap estimated from the optical transmittance and reflectance spectra showed a direct transition at 1.59 eV. The films are photosensitive and the photo electrochemical measurements showed the p-type conductivity of the films. (C) The Author(s) 2015. Published by ECS. All rights reserved.
机译:在这项工作中,通过沉积后热处理从一堆二元金属硫化物中开发出了纯相Cu2ZnSnS4(CZTS)薄膜。通过依次电沉积SnS和Cu层,然后热蒸发ZnS层,生长前驱体堆叠SnS / Cu / ZnS。使用不同的实验工具,例如X射线衍射(XRD),拉曼光谱,扫描电子显微镜(SEM),透射电子显微镜(TEM)和X射线光电子光谱(XPS),研究了从二元/三元成分到纯CZTS的转变。 )。 TEM图像揭示了晶面间距为0.312nm的四方晶体的形成。薄膜的拉曼光谱证实在N-2 / S环境下在550摄氏度下退火30分钟导致形成了纯相CZTS薄膜。根据光学透射率和反射率光谱估算的带隙显示出在1.59 eV处的直接跃迁。所述膜是光敏的,并且光电化学测量显示出所述膜的p型电导率。 (C)2015年作者。ECS发布。版权所有。

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