Polarized Raman Signals from Si Wafers: Dependence of In-Plane Incident Orientation of Probing Light

摘要

We report observations on polarization behavior of Raman signals from Si(100), Si(110) and Si(111) wafers depending on the orientation of in-plane probing light, in very high spectral resolution Raman measurements. Bare Si wafers were measured at the center of wafers, at 5. increments of wafer rotation, using a polychromator-based multiwavelength Raman system under 457.9, 488.0 and 514.5 nm excitation. Four-fold, two-fold and three-fold symmetrical oscillations of Raman intensity, shift and full-width-at-halfmaximum (FWHM) were observed on Si(100), Si(110) and Si(111) wafers, respectively. In Si(100), intensity and FWHM showed their maximum at < 100 > directions, while Raman shift showed its maximum at < 110 > directions. (C) The Author(s) 2015. Published by ECS. All rights reserved.