Numerical simulation of the pseudo-MOSFET characterization technique

摘要

Theψ-MOSFET offers the most appropriate method for detailed electrical characterization of bare silicon on insulator (SOI) wafers. 2-D and 3-D numerical simulations of the ψ-MOSFET are performed in order to validate the basic principles and touncover several less obvious aspects: evaluation of the geometrical factor, distribution of the current lines, influence of the sample size and borders proximity. The optimal conditions for accurate operation of the ψ-MOSFET are clarified in terms ofsample dimensions, probe inter-distance, film thickness and contact area.