首页> 外文期刊>International Journal of Quantum Chemistry >Exploring the distribution of copper-Schiff base complex covalently anchored onto the surface of mesoporous MCM 41 silica
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Exploring the distribution of copper-Schiff base complex covalently anchored onto the surface of mesoporous MCM 41 silica

机译:探索共价锚定在介孔MCM 41二氧化硅表面上的铜席夫碱配合物的分布

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A series of copper-Schiff base MCM 41 materials, synthesized by post-synthetic grafting, was studied by X-ray photoelectron spectroscopy (XPS) and nitrogen sorption (77 K) to explore distribution of the copper Schiff base complex immobilized on the porous Si-MCM 41. Additional information on the physico-chemical properties of the functionalized materials was obtained by powder X-ray diffraction (XRD), atomic absorption spectroscopy (AAS), CHN microanalysis, FTIR spectroscopy, Si-29 and C-13 CP MAS NMR spectroscopy. The effect of copper-Schiff base complex loading and reaction times on the surface properties of Si-MCM 41 (surface area and pore parameters) in addition to its distribution within the Si-MCM 41 was explored by nitrogen sorption and XPS coupled with argon etching. Argon etching of a surface to a depth of 45 angstrom confirmed that the copper-Schiff base complex was distributed both on the external surface (pore end) and within the pores of Si-MCM 41. The amount of complex located in the pores at this depth was about one-third of the amount detected on the external surface of MCM 41. Nitrogen sorption isotherms measured at 77 K confirmed the reduction in total pore volume and surface area was the result of pore narrowing of Si-MCM 41 following grafting of complex in the 8 h samples. A significant decrease in surface area and pore volume for the 20 h sample (longer reaction time), with the highest copper loading (0.65 mmol g(-1)), confirmed pore blocking in this material. The uneven distribution of the copper complex between the external and internal surface of Si-MCM 41 was attributed to the bulky nature of the complex, which restricted access to the pores. (c) 2005 Elsevier Inc. All rights reserved.
机译:利用X射线光电子能谱(XPS)和氮吸附(77 K)研究了合成后接枝的一系列席夫铜基MCM 41材料,探讨了固定在多孔硅上的席夫铜基配合物的分布。 -MCM 41.通过粉末X射线衍射(XRD),原子吸收光谱(AAS),CHN显微分析,FTIR光谱,Si-29和C-13 CP MAS获得有关功能化材料物理化学性质的其他信息。 NMR光谱。通过氮吸附和XPS结合氩蚀刻研究了铜-席夫碱配合物的负载量和反应时间对Si-MCM 41的表面性质(表面积和孔参数)的影响以及其在Si-MCM 41中的分布。 。表面的氩蚀刻至45埃的深度证实,铜-席夫碱配合物既分布在外表面(孔端),又分布在Si-MCM 41的孔内。此时,位于孔中的配合物数量深度约为在MCM 41外表面上检测到的量的三分之一。在77 K下测得的氮吸附等温线证实总孔体积和表面积的减少是复合物接枝后Si-MCM 41的孔变窄的结果在8小时的样本中。 20 h样品的表面积和孔体积显着减少(更长的反应时间),具有最高的铜负载量(0.65 mmol g(-1)),证实了该材料中的孔阻塞。 Si-MCM 41的内外表面之间的铜络合物分布不均匀,归因于该络合物的体积大,限制了通向孔的通道。 (c)2005 Elsevier Inc.保留所有权利。

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