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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Critical exponents of the transport properties at the B2 double left right arrow IC double left right arrow C(R) transitions in Ti-Ni-Me shape memory alloys
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Critical exponents of the transport properties at the B2 double left right arrow IC double left right arrow C(R) transitions in Ti-Ni-Me shape memory alloys

机译:Ti-Ni-Me形状记忆合金中B2左上右箭头IC左上右箭头C(R)跃迁处的传输特性的临界指数

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摘要

Critical behaviour of the physical properties at the B2 double left right arrow IC double left right arrow C(R) phase transitions in TiNi-based shape memory alloys has been analyzed in the frame of the charge density wave (CDW) model. Variation of total resistance at the Peierls-type B2 double left right arrow IC double left right arrow C(R) transition in TiNiMe (Me=Cr, Fe, Al, Ge) alloys has been found to be a sum of the beta-phase normal contribution, fluctuating CDW resistance rho(f)(T) in the incommensurate state and resistance change due to the energy gap formation rho(c)(T) in the commensurate state. The fitting parameters such as the energy gap at saturation Delta(0) and the number of electrons involved in the process of the CDW's formation psi(0) have been determined as a function of the alloy chemical composition and thermal treatment at moderate temperature. The critical resistive fluctuations in the incommensurate phase follow a power law d(rho f)/dt* similar to t(*m) with critical exponent m = -1. In the frame of the CDW model this means that the process of electron scattering from periodic distortion is strongly limited to a definite plane of the crystal and system is two-dimensional, The change of rho(c) with temperature is controlled by the activation energy law corresponding to electron single excitations through the gap Delta(T), with a varying psi(T) effective number of the electrons involved in the process. The total enthalpy measured during cooling is compared with the heat calculated for the energy gap opening at the Fermi level during the IC double right arrow C(R) transition in the frame of the Shottky anomaly approximation. Both values are of the same order. When hydrostatic pressure is applied to the material, a small drop in the conductivity is observed around P similar to 2 GPa and interpreted as CDW pinning by commensurability locking at a temperature higher than the transition temperature at normal pressure. [References: 28]
机译:已经在电荷密度波(CDW)模型的框架内分析了TiNi基形状记忆合金中B2双左向右箭头IC双左向右箭头C(R)相变时的物理性能的临界行为。已发现TiNiMe(Me = Cr,Fe,Al,Ge)合金中Peierls型B2双左向右箭头IC双向右向箭头C(R)转变时的总电阻变化是β相的总和正常贡献,在不相称状态下波动的CDW电阻rho(f)(T)和在相称状态下由于能隙形成rho(c)(T)引起的电阻变化。已经确定了拟合参数,例如饱和度Delta(0)处的能隙和CDW形成过程psi(0)中涉及的电子数,取决于合金化学成分和在中等温度下的热处理的函数。不相称相中的临界电阻性波动遵循幂律d(rho f)/ dt *类似于t(* m),临界指数m = -1。在CDW模型的框架中,这意味着来自周期性畸变的电子散射过程被严格地限制在晶体的确定平面上,并且系统是二维的。rho(c)随温度的变化由活化能控制。该定律对应于通过间隙Delta(T)的电子单次激发,该过程中涉及的电子的有效psi(T)数均变化。将在冷却期间测得的总焓与在Shottky异常逼近框架中的IC双向右箭头C(R)过渡期间在费米能级处打开的能隙计算的热量进行比较。这两个值的顺序相同。当对材料施加静水压力时,在P周围观察到电导率的小幅下降,类似于2 GPa,并通过可比性锁定在高于常压下的转变温度的温度下解释为CDW钉扎。 [参考:28]

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