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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Electronic structure and electron charge density in the interatomic bonds of bisbr and bisebr crystals
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Electronic structure and electron charge density in the interatomic bonds of bisbr and bisebr crystals

机译:Bibr和Bisebr晶体的原子间键的电子结构和电子电荷密度

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摘要

Electronic structure and electronic charge density in the interatomic bonds are investigated with ab initio calculations based on the density-functional theory. The full potential linearized augmented plane-wave method was used with the generalized gradient approximation. Considering the partial density of states the electron charge density distribution in the Bi, S, Se and Br atomic bonds is caused by Bi-6p, S-3p, Se-4p, Br-4p orbital hybridization. Electronic charge distribution of one BiSBr and BiSeBr molecule range suggest that the Bi-S, Bi-Se and Bi-Br bonds are covalent-ionic type. Bi-S and Bi-Se bonds are strong covalent with a not great ionicity factor ($fi^P = 0.060$, Bi-S; $fi^P = 0.039$, Bi-Se). Bi-Br bonds are covalent type with a larger ionicity factor ($fi^P = 0.147$, Bi-Br).
机译:基于密度泛函理论从头算计算了原子间键的电子结构和电荷密度。全电位线性化增强平面波方法与广义梯度近似一起使用。考虑到部分状态密度,Bi,S,Se和Br原子键中的电子电荷密度分布是由Bi-6p,S-3p,Se-4p,Br-4p轨道杂交引起的。一个BiSBr和BiSeBr分子范围的电荷分布表明Bi-S,Bi-Se和Bi-Br键是共价离子型。 Bi-S和Bi-Se键具有强共价键,且电离系数不高($ fi ^ P = 0.060 $,Bi-S; $ fi ^ P = 0.039 $,Bi-Se)。 Bi-Br键是具有较大离子性因子的共价键($ fi ^ P = 0.147 $,Bi-Br)。

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