Theoretical study of inhomogeneously-broadened-line shapes of luminescent and laser f-element transitions in semiconductor and dielectric dies

摘要

The many-body problem is solved for f-element complexes in solids. Multielectron orbitals are constructed from single-electron ones. Complexes of f-ions surrounded by sulphur, oxygen and fluoride ligands (atoms or ions) are employed as a model of radiating centres in order to describe the optoelectronic behavior of materials in the cluster approximation. Probabilities and intensities of luminescent- and laser-transition Stark components are calculated. Inhomogeneous broadening of line shapes in solids is studied for various excitation regimes.