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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Electrical transport in magnetic sandwich with interface inter-diffusional roughness and/or alloying
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Electrical transport in magnetic sandwich with interface inter-diffusional roughness and/or alloying

机译:具有界面间扩散粗糙度和/或合金化的磁性夹层中的电传输

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摘要

A thin transition sublayer with its own spin-dependent lattice potentials and relaxation times of the conduction electrons is introduced to describe the interface inter-diffusional roughness and/or alloying. Within the real-space Kubo formalism, the contribution of the spin-dependent lattice potentials to the giant magnetoresistance (GMR) effect, the dependence of the GMR effect on the spin asymmetry ratio and the spin-down relaxation time of the transition sublayers, the GMR effect versus the thickness of the ferromagnetic (FM) and nonmagnetic (NM) layers are discussed based on the jellium model with step-like and spin-dependent lattice potentials. The interesting results emerging in our calculations are that (1) the contribution of the spin-dependent lattice potentials to the GMR effect may be positive or negative, it is decided by the thicknesses of the FM and NM layers; (2) the contribution of spin-dependent lattice potentials to the GMR effect is much weaker than that of the spin-dependent relaxation times; (3) the increase or decrease of the GMR effect is not simply decided by the increased or decreased interface disorder but decided by the increased or decreased spin asymmetry ratio of the interface structure, which is caused by the change of the interface disorder; (4) for the case of the spin asymmetry ratio of the transition sublayers smaller than that of the FM layers, there exists a critical thickness d_c for the thickness d_F of the FM layers, when d_F > d_c, the existence of the interface inter-diffusional roughness and/or alloying increases the GMR effect, however, when d_F < d_c, it is on the contrary.
机译:引入具有自旋相关晶格势和导电电子弛豫时间的薄过渡子层,以描述界面间扩散粗糙度和/或合金化。在真实空间Kubo形式主义中,自旋相关的晶格势对巨磁阻(GMR)效应的贡献,GMR效应对自旋不对称率的依赖以及过渡子层的自旋向下弛豫时间,基于具有阶跃和自旋相关晶格势的硒模型,讨论了GMR效应与铁磁(FM)和非磁(NM)层厚度的关系。在我们的计算中得出的有趣结果是:(1)自旋相关晶格势对GMR效应的贡献可能是正也可能是负,这取决于FM和NM层的厚度; (2)自旋依赖性晶格势对GMR效应的贡献远弱于自旋依赖性弛豫时间。 (3)GMR效应的增加或减少不仅由界面无序性的增加或减少决定,而且还由界面无序性变化引起的界面结构自旋不对称率的增加或减少决定。 (4)对于过渡子层的自旋不对称比小于FM层的情况,对于FM层的厚度d_F存在临界厚度d_c,当d_F> d_c时,界面之间存在-扩散粗糙度和/或合金化会增加GMR效果,但是,当d_F

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