Integrated finite element method and response surface methodology-based modelling and simulation of single point diamond turning of silicon

摘要

This paper presents an integrated finite element method-response surface methodology (FEM-RSM)-based approach for modelling and simulation of single point diamond turning (SPDT) operation of silicon. Initially, a two-dimensional nonlinear plain strain model of SPDT process has been developed by using FEM. The results predicted by the numerical model were validated with the experimental results available in the literature for similar process conditions and they found in good agreement. Detailed parametric studies were carried out using RSM to study the effect of cutting speed, rake angle, depth of cut and tool edge radius on machining forces. The RSM-based model was also validated by carrying out confirmation simulations and the model was found to be predicting good with mean prediction error of about 5%. It is felt that the proposed approach can be a good alternative to the costly, time consuming and tedious SPDT experimental study of silicon material.