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首页> 外文期刊>IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society >Impact of Self-Heating and Elevated Temperature on Performance of Quantum Dot Microdisk Lasers
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Impact of Self-Heating and Elevated Temperature on Performance of Quantum Dot Microdisk Lasers

机译:自热和高温对量子点微盘激光器性能的影响

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摘要

We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical power limited by the thermal rollover effect, the corresponding injection current and excess temperature of the device. The model predicts, there exists the maximum temperature of microlaser operation in CW regime and the minimum mircrodisk diameter, at which CW lasing is possible. The model allows one to determine the dependence of the device characteristics on its diameter and the inherent parameters, such as thermal resistance, electrical resistance, non-radiative recombination and characteristic temperature of the threshold current. It is found that a rapid growth of the threshold current density with decreasing the diameter (which takes place even in the absence of the self-heating effect) is the main internal reason leading to the dependence of the temperature characteristics of the mirodisk laser on its size. In the calculations, we used a set of parameters extracted from experiments with InGaAs quantum dot microdisk lasers. The simulation results (in particular, the light-current curve and the dependence of the minimum microdisk diameter on ambient temperature) comply well with the measured dependences.
机译:我们讨论了自热对在室温和高温下以连续波 (CW) 状态运行的注射微盘激光器性能的影响。开发了一个模型,该模型允许人们获得受热翻转效应、相应注入电流和器件过热温度限制的峰值光功率的解析表达式。该模型预测,在连续波模式下,存在微激光工作的最高温度和最小微圆盘直径,在该温度下可以进行连续激光。该模型允许确定器件特性对其直径和固有参数的依赖性,例如热阻、电阻、非辐射复合和阈值电流的特征温度。研究发现,随着直径的减小,阈值电流密度的快速增长(即使在没有自热效应的情况下也会发生这种情况)是导致颢尾盘激光器的温度特性对其尺寸的依赖性的主要内部原因。在计算中,我们使用了从InGaAs量子点微盘激光器实验中提取的一组参数。仿真结果(特别是光电流曲线和最小微盘直径对环境温度的依赖性)与测量的依赖性非常吻合。

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