DESIGN CONSIDERATIONS FOR INTEGRATED MODULATOR DRIVERS IN SILICON GERMANIUM TECHNOLOGY

摘要

We present design considerations for high speed high swing differential modulator drivers in SiGe BiCMOS technology. Trade-offs between lumped and distributed designs, and linear and limiting amplifiers are examined. The design of a 6 V output modulator driver is discussed in detail. The driver features a unique bias generation and distribution circuit that enables low power-supply operation. Simulation results and measurements are given.