The Gate-Controlled Diode, High-Frequency, and Quasi-Static $C$ #x2013;$V$ Techniques for Characterizing Advanced Vertical Trenched Power MOSFETs

摘要

Gate-controlled diode (GCD), also called #x201C;MOS-gated diode,#x201D; is an effective and feasible technique to characterize the MOSFET critical parameters. However, the GCD current, from thermal generation, is often too low to be measurable with accuracy. We have successfully fabricated and characterized the GCD for an n-channel advanced vertical trenched power MOSFET. For a typical high-power MOSFET, the channel length is in the submicrometer range, and the transistor width is several #x201C;meters#x201D; (packed into a tiny area). The GCD current can be detected with such extended transistor dimensions for a power MOSFET. The effects of epi doping concentration and thermal cycles are discussed. The high-frequency and quasi-static $C$ #x2013;$V$s measured from the power MOSFETs are analyzed and compared with the GCD data in this brief.