机译:Statistical Characterization and Modeling of the Temporal Evolutions of amp;formula formulatype="inline"amp; amp;img src="/images/tex/20761.gif" alt="Delta V_{rm t}"amp; amp;/formulaamp; Distribution in NBTI Recovery in Nanometer MOSFETs
Department of Electronics Engineering, National Chiao Tung University, Hsinchu , Taiwan;
Integrated circuit modeling; Logic gates; MOSFETs; Mathematical model; Monte Carlo methods; Semiconductor device modeling; Temperature measurement; Activation energy; charge emission time; negative bias temperature instability; recovery; statistical model;