Correlation Between Random Telegraph Noise and $ hbox{1}/f$ Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain

摘要

The random telegraph noise (RTN) characteristics of 28-nm pMOSFETs with tip-shaped SiGe source/drain have been investigated. RTN analysis found that strained devices undergo higher compressive strain; the trap position from the $hbox{Si/SiO}_{2}$ interface is reduced, because of the closer trap energy level near the valence band. Although tip-shaped SiGe process induces higher oxide trap density, the trap position corresponding to the tunneling attenuation length $(lambda)$ may result in lower $hbox{1}/f$ noise level in tip-shaped SiGe S/D devices as compared with that of control devices.