We demonstrate the use of industrial-orientated screen-printed aluminum-alloyed $hbox{p}^{+}$ emitter for high-efficiency n-type interdigitated back-contact silicon solar cells. Different cell designs with various pitch sizes and emitter fractions have been studied. With an improved front surface field (FSF), short-circuit current densities up to 40 $ hbox{mA/cm}^{2}$ can be obtained. By combining the best cell design and the improved FSF, a high conversion efficiency of 19.1 with Czochralski n-type material has been achieved.
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