Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels

摘要

In this letter, we have investigated experimentally, for the first time, the feasibility of gate-all-around polycrystalline silicon (poly-Si) nanowire transistors with junctionless (JL) configuration by utilizing only one heavily doped poly-Si layer to serve as source, channel, and drain regions. In situ doped poly-Si material features high and uniform-doping concentration, facilitating the fabrication process. The developed JL device exhibits desirable electrostatic performance in terms of higher ON/OFF current ratio and lower source/drain series resistance as compared with the inversion-mode counterpart. Such scheme appears of great potential for future system-on-panel and 3-D IC applications.